IRFP4232PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFP4232PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Supplier Device Package
TO-247AC
Operating Temperature
-40°C~175°C TJ
Packaging
Bulk
Published
2007
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Resistance
35.7MOhm
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Voltage - Rated DC
250V
Technology
MOSFET (Metal Oxide)
Current Rating
60A
Number of Elements
1
Power Dissipation-Max
430W Tc
Element Configuration
Single
Power Dissipation
430W
Turn On Delay Time
37 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
35.7mOhm @ 42A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7290pF @ 25V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
64 ns
Continuous Drain Current (ID)
60A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
250V
Dual Supply Voltage
250V
Input Capacitance
7.29nF
Drain to Source Resistance
35.7mOhm
Rds On Max
35.7 mΩ
Nominal Vgs
5 V
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRFP4232PBF Product Details
IRFP4232PBF Description
The IRFP4232PBF is a HEXFET? Power MOSFET application in Plasma Display Panels utilizing the latest processing techniques to achieve low on-resistance per silicon area and low Epul sE rating.
IRFP4232PBF Features
Advanced process technology
Key parameters optimized for PDP Sustain & Energy Recovery applications
Low Epul sE rating to reduce the power dissipation in Sustain & ER applications
Low QG for fast response
High repetitive peak current capability for reliable operation
Shortfall & rise times for fast switching
175°C operating junction temperature for improved ruggedness
Repetitive avalanche capability for robustness and reliability