IRFP4568PBF

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IRFP4568PBF

Manufacturer part number:IRFP4568PBF

Manufacturer:Infineon Technologies

Description:IRFP4568PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFP4568PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	517W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	517W
Case Connection	DRAIN
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.9m Ω @ 103A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10470pF @ 50V
Current - Continuous Drain (Id) @ 25°C	171A Tc
Gate Charge (Qg) (Max) @ Vgs	227nC @ 10V
Rise Time	119ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	84 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	171A
Threshold Voltage	5V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.0059Ohm
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	684A
Dual Supply Voltage	150V
Max Junction Temperature (Tj)	175°C
Nominal Vgs	5 V
Height	24.99mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free