FQI8N60CTU

new-10%

Manufacturer part number:FQI8N60CTU

Manufacturer:ON Semiconductor

Description:MOSFET 600V N-Channel Adv Q-FET C-Series

Case Package:SOT-23

Datasheet:FQI8N60CTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Weight	2.084g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	8A
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	3.13W Ta 147W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.13W
Turn On Delay Time	16.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 3.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1255pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.5A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	60.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	64.5 ns
Turn-Off Delay Time	81 ns
Continuous Drain Current (ID)	7.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	230 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free