IRFP4768PBF

new-10%

Manufacturer part number:IRFP4768PBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 17.5m Ω @ 56A, 10V ±20V 10880pF @ 50V 270nC @ 10V TO-247-3

Case Package:SOT-23

Datasheet:IRFP4768PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	17.5MOhm
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	520W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	520W
Case Connection	DRAIN
Turn On Delay Time	36 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17.5m Ω @ 56A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10880pF @ 50V
Current - Continuous Drain (Id) @ 25°C	93A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Rise Time	160ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	57 ns
Continuous Drain Current (ID)	93A
Threshold Voltage	5V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	250V
Dual Supply Voltage	250V
Avalanche Energy Rating (Eas)	770 mJ
Nominal Vgs	5 V
Height	20.7mm
Length	15.87mm
Width	5.3086mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free