IRFR1018EPBF

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IRFR1018EPBF

Manufacturer part number:IRFR1018EPBF

Manufacturer:Infineon Technologies

Description:IRFR1018EPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFR1018EPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.4m Ω @ 47A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	2290pF @ 50V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	79A
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	56A
Drain-source On Resistance-Max	0.0084Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	88 mJ
Recovery Time	39 ns
Height	2.3876mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free