SI4348DY-T1-E3

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Manufacturer part number:SI4348DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 8A 8-SOIC

Case Package:SOT-23

Datasheet:SI4348DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.31W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.5m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Current - Continuous Drain (Id) @ 25°C	8A Ta
Gate Charge (Qg) (Max) @ Vgs	23nC @ 4.5V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	30V
Height	1.55mm
Length	5mm
Width	4mm
RoHS Status	ROHS3 Compliant