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IRFR1018ETRRPBF

IRFR1018ETRRPBF

IRFR1018ETRRPBF

Infineon Technologies

MOSFET N-CH 60V 79A DPAK

SOT-23

IRFR1018ETRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 110W Tc
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 2.29nF
Drain to Source Resistance 8.4mOhm
Rds On Max 8.4 mΩ
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.614353 $0.614353
10 $0.579578 $5.79578
100 $0.546772 $54.6772
500 $0.515823 $257.9115
1000 $0.486625 $486.625

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