RTQ030P02TR

new-10%

Manufacturer part number:RTQ030P02TR

Manufacturer:ROHM Semiconductor

Description:MOSFET P-CH 20V 3A TSMT6

Case Package:SOT-23

Datasheet:RTQ030P02TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-3A
[email protected] Reflow Temperature-Max (s)	10
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.25W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V
Rise Time	27ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	3A
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
Nominal Vgs	-2 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free