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IRFR13N20DTRPBF

IRFR13N20DTRPBF

IRFR13N20DTRPBF

Infineon Technologies

IRFR13N20DTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR13N20DTRPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 235mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 13A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 235m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 5.5V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 52A
Dual Supply Voltage 200V
Recovery Time 210 ns
Nominal Vgs 5.5 V
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
IRFR13N20DTRPBF Product Details

IRFR13N20DTRPBF Description


IRFR13N20DTRPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of IRFR13N20DTRPBF is -55°C~175°C TJ and its maximum power dissipation is 110W Tc. IRFR13N20DTRPBF has 3 pins and it is available in Tape & Reel (TR) packaging way.



IRFR13N20DTRPBF Features


  • Drain to Source Breakdown Voltage: 200V

  • JEDEC-95 Code: TO-252AA

  • Rds On (Max) @ Id, Vgs: 235m Ω @ 8A, 10V

  • JESD-30 Code: R-PSSO-G2



IRFR13N20DTRPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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