Description

The IRFR3410PBF is a HEXFET? single N-channel Power MOSFET that offers a low gate-to-drain charge to reduce switching losses. It is suitable for high-frequency DC-to-DC converters. An N-Channel MOSFET makes a current channel out of electrons. This allows electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications.

Features

• Fully Characterized Capacitance Including Effective C_OSS to Simplify Design

• Fully Characterized Avalanche Voltage and Current

• Dynamic dV/dt Rating

• Fast Switching

• Fully Avalanche Rating

Applications

• High-frequency DC-DC converters

• Lead-Free

• Power Management

• Small motor control

• Automotive applications