FQU1N60TU

new-10%

Manufacturer part number:FQU1N60TU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 1A IPAK

Case Package:SOT-23

Datasheet:FQU1N60TU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	1A
Power Dissipation-Max	2.5W Ta 30W Tc
Element Configuration	Single
Power Dissipation	2.5W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1A Tc
Gate Charge (Qg) (Max) @ Vgs	6nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	7 ns
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
RoHS Status	RoHS Compliant
Lead Free	Lead Free