Name: IRFR5305PBF
Brand: Infineon Technologies
SKU: IRFR5305PBF
Availability: InStock

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IRFR5305PBF

Manufacturer part number:IRFR5305PBF

Manufacturer:Infineon Technologies

Description:IRFR5305PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFR5305PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
HTS Code	8541.29.00.95
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	110W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	31A
Drain-source On Resistance-Max	0.065Ohm
Pulsed Drain Current-Max (IDM)	110A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	280 mJ
RoHS Status	ROHS3 Compliant

IRFR5305PBF Product Details

IRFR5305PBF Description

International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to provide exceptionally low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device design that HEXFET? Power MOSFETs are renowned for.

The D-Pak is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For through-hole mounting uses, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.