FDC636P   Description

  These P-channel logic level enhanced mode power field effect transistors are produced using Fairchild's proprietary high cell density DMOS technology. This very high-density process is particularly suitable for low-voltage applications, such as cellular phone and laptop power management and other battery-powered circuits, which require high-end switches and low line power consumption in a very small form factor surface mount package.

FDC636P   Features

-2.8A-20VRo=0.130Ω@Vs=-4.5V

RDSN=0.180Ω @VGs=-2.5V

SuperSOT -6 package design using copper lead frame for superior thermal and electrical capabilities

High density cell design for extremely low RSION)

Exceptional on-resistance and maximum DC current capability.

FDC636P    Applications

cellular phone and laptop power management

other battery-powered circuits