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PSMN050-80BS,118

PSMN050-80BS,118

PSMN050-80BS,118

Nexperia USA Inc.

N-Channel Tape & Reel (TR) 46m Ω @ 10A, 10V ±20V 633pF @ 12V 11nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

PSMN050-80BS,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 56W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 56W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 12V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 1ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.4 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 5.2V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.046Ohm
Drain to Source Breakdown Voltage 73V
Pulsed Drain Current-Max (IDM) 88A
Avalanche Energy Rating (Eas) 18 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.619302 $2.619302
10 $2.471040 $24.7104
100 $2.331170 $233.117
500 $2.199217 $1099.6085
1000 $2.074733 $2074.733
PSMN050-80BS,118 Product Details

PSMN050-80BS,118 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 18 mJ.A device's maximum input capacitance is 633pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 22A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=73V, and this device has a drain-to-source breakdown voltage of 73V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16 ns.Its maximum pulsed drain current is 88A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 5.2V.Powered by 80V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

PSMN050-80BS,118 Features


the avalanche energy rating (Eas) is 18 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 73V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 88A.


PSMN050-80BS,118 Applications


There are a lot of Nexperia USA Inc.
PSMN050-80BS,118 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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