IRFR825PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFR825PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2012
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
119W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
119W
Turn On Delay Time
8.5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.3 Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1346pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
6A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
6A
Drain to Source Breakdown Voltage
500V
Recovery Time
138 ns
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.241942
$0.241942
10
$0.228247
$2.28247
100
$0.215328
$21.5328
500
$0.203139
$101.5695
1000
$0.191641
$191.641
IRFR825PBF Product Details
IRFR825PBF Description
IRFR825PBF is a 500V Single N-Channel HEXFET Power MOSFET in a D-Pak package. The IRFR825PBF MOSFET is mounted in the way of a surface mount. It is suitable to operate the IRFR825PBF at the temperature range from
-55°C to 150°C. The IRFR825PBF belongs to FET General Purpose Power.
IRFR825PBF Features
A higher gate voltage threshold offers improved noise immunity.
Lower gate charge results in more specific driver requirements.
Fast body diode eliminates the need for external diodes in ZVS applications