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IRFR825PBF

IRFR825PBF

IRFR825PBF

Infineon Technologies

IRFR825PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFR825PBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 119W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 119W
Turn On Delay Time 8.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3 Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1346pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 500V
Recovery Time 138 ns
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.241942 $0.241942
10 $0.228247 $2.28247
100 $0.215328 $21.5328
500 $0.203139 $101.5695
1000 $0.191641 $191.641
IRFR825PBF Product Details

IRFR825PBF Description

IRFR825PBF is a 500V Single N-Channel HEXFET Power MOSFET in a D-Pak package. The IRFR825PBF  MOSFET is mounted in the way of a surface mount. It is suitable to operate the IRFR825PBF at the temperature range from 

-55°C to 150°C. The IRFR825PBF belongs to FET General Purpose Power.


IRFR825PBF Features

  • A higher gate voltage threshold offers improved noise immunity.

  • Lower gate charge results in more specific driver requirements.

  • Fast body diode eliminates the need for external diodes in ZVS applications


IRFR825PBF Applications

  • Zero Voltage Switching SMPS

  • Motor Control applications

  • Uninterruptible Power Supplies


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