TSM85N10CZ C0G

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Manufacturer part number:TSM85N10CZ C0G

Manufacturer:Taiwan Semiconductor Corporation

Description:MOSFET (Metal Oxide) N-Channel Tube 10mOhm @ 40A, 10V ±20V 3900pF @ 30V 154nC @ 10V 100V TO-220-3

Case Package:SOT-23

Datasheet:TSM85N10CZ C0G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	210W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 30V
Current - Continuous Drain (Id) @ 25°C	81A Tc
Gate Charge (Qg) (Max) @ Vgs	154nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$6.526422	$6.526422
10	$6.157001	$61.57001
100	$5.808493	$580.8493
500	$5.479710	$2739.855
1000	$5.169537	$5169.537

TSM85N10CZ C0G Overview

A device's maximum input capacitance is 3900pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.