IRFS3107PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFS3107PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2008
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
370W Tc
Element Configuration
Single
Power Dissipation
370W
Turn On Delay Time
19 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3m Ω @ 140A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
9370pF @ 50V
Current - Continuous Drain (Id) @ 25°C
195A Tc
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V
Rise Time
110ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
100 ns
Turn-Off Delay Time
99 ns
Reverse Recovery Time
54 ns
Continuous Drain Current (ID)
230A
Threshold Voltage
2.35V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Dual Supply Voltage
75V
Nominal Vgs
2.35 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
IRFS3107PBF Product Details
IRFS3107PBF Description
In 1977, Alex Lidow and Tom Herman co-invented HexFET, a hexagonal power MOSFET, at Stanford University. HexFET was commercialized by the International Rectifier in 1978.