IXTN21N100

new-10%

Manufacturer part number:IXTN21N100

Manufacturer:IXYS

Description:MOSFET N-CH 1KV 21A SOT-227B

Case Package:SOT-23

Datasheet:IXTN21N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	MegaMOS™
Part Status	Active
Number of Terminations	4
ECCN Code	EAR99
Resistance	550mOhm
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Reach Compliance Code	unknown
Current Rating	21A
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	520W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	520W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	550m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	8400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	50ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	21A
Threshold Voltage	4.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	84A
Dual Supply Voltage	1kV
Nominal Vgs	4.5 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free