IRFS4010-7PPBF

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IRFS4010-7PPBF

Manufacturer part number:IRFS4010-7PPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 190A D2PAK-7

Case Package:SOT-23

Datasheet:IRFS4010-7PPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Power Dissipation-Max	380W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	380W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4m Ω @ 110A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9830pF @ 50V
Current - Continuous Drain (Id) @ 25°C	190A Tc
Gate Charge (Qg) (Max) @ Vgs	230nC @ 10V
Rise Time	56ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	48 ns
Turn-Off Delay Time	100 ns
Reverse Recovery Time	60 ns
Continuous Drain Current (ID)	190A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.004Ohm
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	330 mJ
Nominal Vgs	4 V
Height	4.55mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free