IRFS4020PBF

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IRFS4020PBF

Manufacturer part number:IRFS4020PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 18A D2PAK

Case Package:SOT-23

Datasheet:IRFS4020PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	100W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
Case Connection	DRAIN
Turn On Delay Time	7.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	105m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 50V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6.3 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	4.9V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.105Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	52A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	94 mJ
Recovery Time	120 ns
Nominal Vgs	4.9 V
Height	4.83mm
Length	10.668mm
Width	4.826mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant