IRFSL4310ZPBF

new-10%

Manufacturer part number:IRFSL4310ZPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 120A TO-262

Case Package:SOT-23

Datasheet:IRFSL4310ZPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6860pF @ 50V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	57 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.006Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	560A
Nominal Vgs	4 V
Height	9.65mm
Length	10.668mm
Width	4.826mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant