IRFS4115-7PPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFS4115-7PPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2008
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
11.8MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G6
Number of Elements
1
Power Dissipation-Max
380W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
380W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11.8m Ω @ 63A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5320pF @ 50V
Current - Continuous Drain (Id) @ 25°C
105A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
50ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
23 ns
Turn-Off Delay Time
37 ns
Continuous Drain Current (ID)
105A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
150V
Pulsed Drain Current-Max (IDM)
420A
Dual Supply Voltage
150V
Avalanche Energy Rating (Eas)
230 mJ
Nominal Vgs
5 V
Height
4.572mm
Length
10.668mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
200
$4.02870
$805.74
IRFS4115-7PPBF Product Details
IRFS4115-7PPBF Description
The IRFS4115-7PPBF is a HEXFET® Power MOSFET. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.
IRFS4115-7PPBF Features
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness