SI3495DV-T1-GE3

new-10%

Manufacturer part number:SI3495DV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 7.0A 2.0W 24mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI3495DV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	19 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id	750mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	5.3A Ta
Gate Charge (Qg) (Max) @ Vgs	38nC @ 4.5V
Rise Time	36ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	106 ns
Turn-Off Delay Time	200 ns
Continuous Drain Current (ID)	-7A
Threshold Voltage	-350mV
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	5.3A
Drain-source On Resistance-Max	0.024Ohm
Drain to Source Breakdown Voltage	-20V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant