IRFS4410 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFS4410 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
225
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
250W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
5150pF @ 50V
Current - Continuous Drain (Id) @ 25°C
96A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
96A
Drain-source On Resistance-Max
0.01Ohm
Pulsed Drain Current-Max (IDM)
380A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
220 mJ
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
200
$3.80265
$760.53
IRFS4410 Product Details
IRFS4410 MOSFET Descriptions
The IRFS4410 power MOSFET utilizes the TO-263 small package. It is specified with low input capacitance and low gate charge. Its storage temperature is -55~175 °C and it has a maximum continuous drain current of 96 A.
IRFS4410 MOSFET Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
With To-263(D2PAK) package
Minimum Lot-to-Lot variations for robust device performance and reliable operation