IRFS5620PBF

new-10%

Manufacturer part number:IRFS5620PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 24A D2PAK

Case Package:SOT-23

Datasheet:IRFS5620PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	144W Tc
Power Dissipation	144W
Turn On Delay Time	8.6 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	77.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 50V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	14.6ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9.9 ns
Turn-Off Delay Time	17.1 ns
Continuous Drain Current (ID)	24A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	1.71nF
Drain to Source Resistance	77.5mOhm
Rds On Max	77.5 mΩ
Nominal Vgs	3 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free