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STS25NH3LL

STS25NH3LL

STS25NH3LL

STMicroelectronics

STS25NH3LL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STS25NH3LL Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ III
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 3.5MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 25A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STS25
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±18V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 18V
Drain to Source Breakdown Voltage 30V
Height 1.25mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
STS25NH3LL Product Details

STS25NH3LL Description


The STMicroelectronics STS25NH3LL utilizes the advanced design rules of ST's proprietary STripFET? technology. The innovative process coupled with unique metallization techniques makes it possible to produce the most advanced low-voltage Power MOSFET in a SO-8 package. The STS25NH3LL is therefore suitable for demanding DC-DC converter applications where high efficiency at high output current is needed.



STS25NH3LL Features


  • Optimal RDS(on) x Qg trade-off @ 4.5 V

  • Conduction losses reduced

  • Switching losses reduced



STS25NH3LL Applications


  • Switching applications


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