IRFU1205PBF

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IRFU1205PBF

Manufacturer part number:IRFU1205PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 44A I-PAK

Case Package:SOT-23

Datasheet:IRFU1205PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	27mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Current Rating	44A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	107W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	69W
Case Connection	DRAIN
Turn On Delay Time	7.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	44A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	160A
Avalanche Energy Rating (Eas)	210 mJ
Height	6.22mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free