TK56E12N1,S1X

new-10%

Manufacturer part number:TK56E12N1,S1X

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans MOSFET N-CH Si 120V 112A 3-Pin(3+Tab) TO-220 Magazine

Case Package:SOT-23

Datasheet:TK56E12N1,S1X Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	U-MOSVIII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	168W Tc
Element Configuration	Single
Power Dissipation	168W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7m Ω @ 28A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 60V
Current - Continuous Drain (Id) @ 25°C	56A Ta
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	73 ns
Continuous Drain Current (ID)	56A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	120V
RoHS Status	RoHS Compliant