IRFU3711PBF

new-10%

Manufacturer part number:IRFU3711PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 100A I-PAK

Case Package:SOT-23

Datasheet:IRFU3711PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Supplier Device Package	IPAK (TO-251)
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Current Rating	110A
Power Dissipation-Max	2.5W Ta 120W Tc
Power Dissipation	120W
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2980pF @ 10V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	44nC @ 4.5V
Rise Time	220ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
Input Capacitance	2.98nF
Drain to Source Resistance	8.5mOhm
Rds On Max	6.5 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free