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SI3879DV-T1-GE3

SI3879DV-T1-GE3

SI3879DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 5A 6-TSOP

SOT-23

SI3879DV-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package 6-TSOP
Weight 19.986414mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series LITTLE FOOT®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 2W Ta 3.3W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 70mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) -5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Input Capacitance 480pF
Drain to Source Resistance 70mOhm
Rds On Max 70 mΩ
RoHS Status ROHS3 Compliant

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