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IRFZ44NPBF

IRFZ44NPBF

IRFZ44NPBF

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 17.5m Ω @ 25A, 10V ±20V 1470pF @ 25V 63nC @ 10V TO-220-3

SOT-23

IRFZ44NPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series HEXFET®
Published 2001
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 17.5MOhm
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating49A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 94W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation83W
Case Connection DRAIN
Turn On Delay Time12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time60ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 2.1V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 95 ns
Nominal Vgs 2.1 V
Height 8.77mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4430 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.39000$1.39
50$1.12440$56.22
100$0.99180$99.18
500$0.78386$391.93

IRFZ44NPBF Product Details

IRFZ44NPBF Description


The IRFZ44NPBF is an N-channel HEXFET? Power MOSFET with a low on-resistance per silicon area and quick switching speed. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.



IRFZ44NPBF Features


  • Lead-Free

  • Fast Switching

  • Dynamic dv/dt Rating

  • Fully Avalanche Rated

  • Ultra-Low On-Resistance

  • Advanced Process Technology

  • 175°C Operating Temperature



IRFZ44NPBF Applications


  • Power management


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