IRFZ44VZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFZ44VZ Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2003
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
92W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 34A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C
57A Tc
Gate Charge (Qg) (Max) @ Vgs
65nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
57A
Drain-source On Resistance-Max
0.012Ohm
Pulsed Drain Current-Max (IDM)
230A
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
110 mJ
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$2.13400
$106.7
IRFZ44VZ Product Details
IRFZ44VZ Description
IRFZ44VZ is a 60v HEXFET? Power MOSFET. The HEXFET? Power MOSFET IRFZ44VZ utilizes the latest ID = 57A processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175??C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this IRFZ44VZ an extremely efficient and reliable device for use in a wide variety of applications.