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IRG4IBC20W

IRG4IBC20W

IRG4IBC20W

Infineon Technologies

IRG4IBC20W datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4IBC20W Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional FeatureLOW CONDUCTION LOSS
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Input Type Standard
Power - Max 34W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 11.8A
Turn On Time36 ns
Test Condition 480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Turn Off Time-Nom (toff) 300 ns
Gate Charge26nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 22ns/110ns
Switching Energy 60μJ (on), 80μJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:1280 items

IRG4IBC20W Product Details

IRG4IBC20W Description


The Infineon Technologies IRG4IBC20W is an insulated gate bipolar transistor designed expressly for Switch-Mode Power Supply and PFC applications.



IRG4IBC20W Features


  • 2.5kV, 60s insulation voltage

  • Industry-benchmark switching losses improve

  • the efficiency of all power supply topologies

  • 50% reduction of Eoff parameter

  • Industry-standard Isolated TO-220 FullpakTM outline

  • Lead-Free



IRG4IBC20W Applications


  • Switch-Mode Power Supply

  • PFC


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