Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Packaging	Tube
Published	2011
Series	POWER MOS 8™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	337W
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	337W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	78A
Collector Emitter Breakdown Voltage	600V
Turn On Time	29 ns
Test Condition	400V, 26A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 26A
Turn Off Time-Nom (toff)	292 ns
IGBT Type	PT
Gate Charge	128nC
Current - Collector Pulsed (Icm)	130A
Td (on/off) @ 25°C	16ns/102ns
Switching Energy	409μJ (on), 450μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	RoHS Compliant

APT44GA60BD30C

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