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APT44GA60BD30C

APT44GA60BD30C

APT44GA60BD30C

Microsemi Corporation

IGBT 600V 78A 337W TO247

SOT-23

APT44GA60BD30C Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Published 2011
Series POWER MOS 8™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 337W
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 337W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 78A
Collector Emitter Breakdown Voltage 600V
Turn On Time 29 ns
Test Condition 400V, 26A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 26A
Turn Off Time-Nom (toff) 292 ns
IGBT Type PT
Gate Charge 128nC
Current - Collector Pulsed (Icm) 130A
Td (on/off) @ 25°C 16ns/102ns
Switching Energy 409μJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
RoHS Status RoHS Compliant

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