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IRG4PC50UD-MP

IRG4PC50UD-MP

IRG4PC50UD-MP

Infineon Technologies

IRG4PC50UD-MP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PC50UD-MP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
PackagingBulk
Published 2000
Series HEXFRED®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Max Power Dissipation200W
Element ConfigurationSingle
Input Type Standard
Power - Max 200W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 55A
Reverse Recovery Time 75 ns
Collector Emitter Breakdown Voltage600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 55A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 27A
Gate Charge270nC
Current - Collector Pulsed (Icm) 220A
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:2854 items

IRG4PC50UD-MP Product Details

IRG4PC50UD-MP Description


IRG4PC50UD-MP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, >200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4PC50UD-MP IGBT ensures lower losses than MOSFET's conduction and Diode losses.



IRG4PC50UD-MP Features


Industry-standard TO-247AC packages

Extremely tight Vce(on) distribution

Tighter parameter distribution

Highest efficiencies available



IRG4PC50UD-MP Applications


Industrial motor drive

Solar inverters

Welding


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