IRG4PC50UD-MP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4PC50UD-MP Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Supplier Device Package
TO-247AC
Packaging
Bulk
Published
2000
Series
HEXFRED®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Element Configuration
Single
Input Type
Standard
Power - Max
200W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
55A
Reverse Recovery Time
75 ns
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
55A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 27A
Gate Charge
270nC
Current - Collector Pulsed (Icm)
220A
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRG4PC50UD-MP Product Details
IRG4PC50UD-MP Description
IRG4PC50UD-MP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, >200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4PC50UD-MP IGBT ensures lower losses than MOSFET's conduction and Diode losses.