IRG4PC50UDPBF

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Manufacturer part number:IRG4PC50UDPBF

Manufacturer:Infineon Technologies

Description:IRG4PC50UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PC50UDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	ULTRA FAST SOFT RECOVERY
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	200W
Current Rating	55A
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	46 ns
Transistor Application	POWER CONTROL
Rise Time	25ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	140 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	55A
Reverse Recovery Time	50 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Input Capacitance	4nF
Turn On Time	71 ns
Test Condition	480V, 27A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 27A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	55A
Turn Off Time-Nom (toff)	370 ns
Gate Charge	180nC
Current - Collector Pulsed (Icm)	220A
Td (on/off) @ 25°C	46ns/140ns
Switching Energy	990μJ (on), 590μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	24.99mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free