IRG4BC10SDPBF                Description

 Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.

IRG4BC10SDPBF                         Features

·Extremely lowvoltage [email protected]

S-Series:Minimizes power dissipation at up to3 KHz PWM frequency in inverter drivesup to4 KHz in brushless DC drives.·Very Tight Vce(on)distribution

·IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recoveryanti-paralle diodes for use in bridge configurations

·lndustry standard TO-220AB package·Lead-Free

.Generation 4 1GBTs offer highest efficiencies available

·GBTs optimized for specific application conditions*HEXFRED diodes optimized for performance with GBTsMinimized recovery characteristios require less/no snubbing

*Lower losses than MOSFET's conduction and Diode losses

IRG4BC10SDPBF                         Applications 

? Induction Heating, Microwave Oven