IRG4RC10SDTRPBFBTMA1 Features

Extremely low voltage drop 1 .1V(typ) @ 2A

S-Series: Minimizes power dissipation atup to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.

Tight parameter distribution

IGBT co-packaged with HEXFRED TM utrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Industry standard TO-252AA package

IRG4RC10SDTRPBFBTMA1  Applications

Generation 4 IGBT's offer highest eficiencies available

IGBT's optimized for specific application conditions

HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing

Lower losses than MOSFET's conduction and Diode losses