IRGI4045DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGI4045DPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220AB Full-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
33W
Reverse Recovery Time
73ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
11A
Test Condition
400V, 6A, 47Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 6A
IGBT Type
Trench
Gate Charge
13nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
26ns/73ns
Switching Energy
64μJ (on), 123μJ (off)
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.697115
$1.697115
10
$1.601051
$16.01051
100
$1.510426
$151.0426
500
$1.424930
$712.465
1000
$1.344274
$1344.274
IRGI4045DPBF Product Details
IRGI4045DPBF Description
A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.
IRGI4045DPBF Features
? Low VCE (on) Trench IGBT Technology
? Low Switching Losses
? 5μs SCSOA
? Square RBSOA
? 100% of The Parts Tested for ILM
? Positive VCE (on) Temperature Coefficient.
? Ultra Fast Soft Recovery Co-pak Diode
? Tighter Distribution of Parameters
? Lead-Free Package
IRGI4045DPBF Applications
·Uninterruptible power supplies Solar converters·Welding converters