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IRG5K75HF06A

IRG5K75HF06A

IRG5K75HF06A

Infineon Technologies

IRG5K75HF06A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG5K75HF06A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 34 Module
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 330W
Configuration Half Bridge
Power - Max 330W
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 140A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.6nF
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.6nF @ 25V
RoHS Status RoHS Compliant
IRG5K75HF06A Product Details

IRG5K75HF06A Description


IRG5K75HF06A is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 600V from Infineon Technologies. IRG5K75HF06A operates between -40°C~150°C TJ, and its Max Collector Current is 140A. The IRG5K75HF06A has 3 pins and it is available in POWIR? 34 Module packaging way. IRG5K75HF06A has a 600V Voltage - Collector Emitter Breakdown (Max) value.



IRG5K75HF06A Features


  • Input Capacitance (Cies) @ Vce: 3.6nF @ 25V

  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A

  • Collector Emitter Breakdown Voltage: 600V

  • Operating Temperature: -40°C~150°C TJ

  • Current - Collector Cutoff (Max): 1mA



IRG5K75HF06A Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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