MWI225-17E9

new-10%

Manufacturer part number:MWI225-17E9

Manufacturer:IXYS

Description:IGBT MODULE 1700V 335A 1400W E+

Case Package:SOT-23

Datasheet:MWI225-17E9 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	E+
Number of Pins	29
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	17
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	UL REGONIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.4kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MWI
Pin Count	29
JESD-30 Code	R-XUFM-X17
Qualification Status	Not Qualified
Number of Elements	6
Configuration	Three Phase
Case Connection	ISOLATED
Power - Max	1400W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.9V
Max Collector Current	335A
Current - Collector Cutoff (Max)	600μA
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Input Capacitance	22nF
Turn On Time	290 ns
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 225A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	22nF @ 25V
RoHS Status	ROHS3 Compliant