IRG5W50HF06A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG5W50HF06A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 34 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
260W
Configuration
Half Bridge
Power - Max
260W
Input
Standard
Collector Emitter Voltage (VCEO)
2.7V
Max Collector Current
75A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
2.6nF
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 50A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
2.6nF @ 25V
RoHS Status
RoHS Compliant
IRG5W50HF06A Product Details
IRG5W50HF06A Description
IRG5W50HF06A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG5W50HF06A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.