IRG7CH73UED-R Description

IRG7CH73UED-R is a 1200V Insulated-gate bipolar transistor. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

IRG7CH73UED-R Features

With pulse-width modulation and low-pass filters

Four alternating layers

High-current and low-saturation-voltage capability

Constructed similarly to an n-channel vertical-construction power MOSFET

The second most widely used power transistor

IRG7CH73UED-R Applications

Consumer electronics

Industrial technology

The energy sector

Aerospace electronic devices

Transportation