IRGC49B120UB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGC49B120UB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Additional Feature
ULTRA FAST
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
O-XUUC-N
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
50A
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 10A
IGBT Type
NPT
Gate-Emitter Thr Voltage-Max
6V
RoHS Status
ROHS3 Compliant
IRGC49B120UB Product Details
IRGC49B120UB Description
This IGBT gadget was developed employing a cutting-edge trench gate and field stop structure. It is a brand-new "HB" series IGBT, which denotes the best conduction and switching loss trade-off for any frequency converter. A fairly limited parameter distribution and a modestly positive VCE(sat) temperature coefficient also result in safer paralleling operation.
IRGC49B120UB Features
Applications for LDO (Linear) and DDR are fairly prevalent.