IRG7CH81K10EF Description

This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. The component is an IGBT from the "V" series, which offers the best balance between conduction and switching losses to enhance the efficiency of very high frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very narrow parameter distribution.

IRG7CH81K10EF Features

• Low switching and VCE(ON) Losses

• Maximum Junction Temperature of 175 °C and Square RBSOA

• performance as well as increased power capacity

• VCE (ON) Temperature Coefficient is positive

• Built-in Gate Resistor

IRG7CH81K10EF Applications

• Drives with Medium Power

• UPS 

• The HEV Inverter

• Welding