IRG7PG42UD-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG7PG42UD-EPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
320W
Reach Compliance Code
unknown
Element Configuration
Single
Input Type
Standard
Power - Max
320W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
85A
Reverse Recovery Time
153 ns
Collector Emitter Breakdown Voltage
1kV
Voltage - Collector Emitter Breakdown (Max)
1000V
Test Condition
600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
IGBT Type
Trench
Gate Charge
157nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
25ns/229ns
Switching Energy
2.11mJ (on), 1.18mJ (off)
RoHS Status
RoHS Compliant
IRG7PG42UD-EPBF Product Details
IRG7PG42UD-EPBF Description
A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.