IXDP35N60B

new-10%

Manufacturer part number:IXDP35N60B

Manufacturer:IXYS

Description:IGBT 600V 60A 250W TO220AB

Case Package:SOT-23

Datasheet:IXDP35N60B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXD*35N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	75 ns
Test Condition	300V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 35A
Turn Off Time-Nom (toff)	390 ns
IGBT Type	NPT
Gate Charge	120nC
Current - Collector Pulsed (Icm)	70A
Switching Energy	1.6mJ (on), 800μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	9.15mm
Length	10.66mm
Width	4.82mm
RoHS Status	ROHS3 Compliant