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IRG7PK35UD1PBF

  • IRG7PK35UD1PBF
  • IRG7PK35UD1PBF

IRG7PK35UD1PBF

IRG7PK35UD1PBF

Infineon Technologies

IRG7PK35UD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PK35UD1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 167W
Reach Compliance Code unknown
Element Configuration Single
Input Type Standard
Power - Max 167W
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 1.4kV
Voltage - Collector Emitter Breakdown (Max) 1400V
Collector Emitter Saturation Voltage 2V
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 20A
Gate Charge 98nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C -/150ns
Switching Energy 650μJ (off)
REACH SVHC No SVHC
RoHS Status RoHS Compliant
IRG7PK35UD1PBF Product Details

IRG7PK35UD1PBF Description

IR introduces the IRG7PK35UD1PbF, a rugged and reliable ultra-high-speed 1400V channel insulated gate bipolar transistor (IGBT) optimized for soft switching applications such as induction and microwave ovens.


IRG7PK35UD1PBF Features

  • Low VCE(ON), ultra-low VF, and turn-off soft-switching losses 

  • High efficiency in a wide range of soft-switching applications and switching frequencies

  • Positive VCE (ON) temperature coefficient and tight distribution of parameters 

  • Excellent current sharing in parallel operation

  • Lead-free, RoHS compliant 


IRG7PK35UD1PBF Applications

  • Induction heating

  • Microwave ovens

  • Soft switching applications


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