IRG7T50FF12E datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG7T50FF12E Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR ECO 2™ Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
340W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Three Phase Inverter
Power - Max
340W
Input
Standard
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
100A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
6.7nF
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 50A
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
6.7nF @ 25V
RoHS Status
RoHS Compliant
IRG7T50FF12E Product Details
IRG7T50FF12E Description
The IRG7T50FF12E is an IGBT Six-Pack with POWIR ECO 2™ Package. IGBT, also known as an insulated-gate bipolar transistor, is a type of power semiconductor die. An IGBT power module is created by physically assembling and enclosing many IGBT power semiconductor dies.