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IRG7U100HF12B

IRG7U100HF12B

IRG7U100HF12B

Infineon Technologies

IRG7U100HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG7U100HF12B Datasheet

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Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 62 Module
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 580W
Configuration Half Bridge
Power - Max 580W
Input Standard
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 200A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 12.5nF
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 100A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 12.5nF @ 25V
RoHS Status RoHS Compliant
IRG7U100HF12B Product Details

IRG7U100HF12B Description


The IRG7U100HF12B is an IGBT Half-Bridge POWIR 62? Package. The usage of an IGBT power module, which serves as a switch, allows for exceptionally quick and highly energy-efficient power on and off operations. The IGBT power module is quickly replacing other devices in high-power applications because of its improved switching, temperature, weight, and cost performance.



IRG7U100HF12B Features


  • Low VCE(ON) and Switching Losses

  • 100% RBSOA Tested

  • POWIR 62? Package

  • Lead Free

  • VCES = 1200V

  • IC = 100A at TC = 80°C

  • VCE(ON) = 1.70V at IC = 100A



IRG7U100HF12B Applications


  • Welding and Cutting Machine

  • Switched Mode Power Supply

  • Induction Heating

  • Industrial Motor Drive

  • Uninterruptible Power Supply


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